solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet features: rugged construction with polysilicon gate cell low r d s(on) and high transconductance excellent high temperature stability very fast switching speed fast recovery and superior dv/dt performance increased reverse energy capability low input and transfer capacitance for easy paralleling hermetically sealed surf ace mount power package tx, txv, space level screening available replacement for ixth24n50 types sff24n 50/3 sff24n50 /3t 24 amp / 5 00 volts 0. 2 w n - channel power mosfet to - 3 maximum ratings symbol value units drain ? source voltage v ds 500 volts gate ? source voltage v gs 20 volts continu ou s drain current (tj limited) i d 24 amps avalanche current repetitive i ar 21 amps avalanche energy repetitive single pulse e ar e as 1 690 mj operating & stora ge temperature top & tstg - 55 to +1 50 oc thermal resistance, junction to case r q jc 0.75 (typ 0.6) o c/w total device dissipation @ tc=25 o c total device dissipation @ tc=55 o c pd 167 12 6 watts package outline: to - 3 pin out: pin 1: gate pin 2: source pi n 3: drain notes: 1 . p/n: sff 24n50/3: pin diameter : 0.043? 0.038? 2. p/n: sff24n50/3t: pin diameter: 0.063? 0.058? note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: f 0 0 175e doc 1.197 1.177 ? .875 max 2x .043 .038 .675 .655 .525 max .135 max .440 .420 2x .225 .205 .450 .250 2x .312 min 2x ? .165 .151 2x r.188 max seating plane 2 1
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sff24n50/3 sff24n50 /3t electrical characteristics @ t j = 25 o c (unless otherwise specified) symbol min typ max units drain to source breakdown voltage (vgs=0 v, id=250 m a ) bv dss 500 ?? ?? volts drain to source on state resistance (vgs=10 v, id=5 0% rated id ) r ds(on) ?? ?? 0.2 w on state drain current (vds>id(on) x rds(on) max, vgs= 10 v) i d(on) 24 ?? ?? a gate threshold voltage (vds=vgs, id= 4ma ) v gs(th) 2.0 ?? 4.0 v forward transconductance (vds>id(on) x rds(on) max, ids= 50% rated id ) g fs 8 1 2 ?? mho zero gate voltage drain current (vds=max rated voltage, vgs=0 v) (vds=80% rated vds, vgs=0 v, ta=125 oc ) i dss ?? ?? ?? ?? 25 0 1000 m a gate to source leakage forward gat e to source leakage reverse at rated vgs i gss ?? ?? ?? ?? + 100 - 100 na total gate charge gate to source charge gate to drain charge vgs=10 volts 5 0% rated vds 50% rated id q g q gs q gd ?? ?? ?? 135 28 62 180 40 85 nc turn on delay time rise time turn on de lay time fall time vdd=50% rated vds 50% rated id rg= 6.2 w vgs=10 volts td(on) tr td(off) tf ?? ?? ?? ?? 16 33 65 30 30 45 130 40 nsec diode forward voltage ( is= rated id, vgs=0 v, tj=25 oc ) v sd ?? ?? 1. 5 v diode reverse recovery time reverse recovery charge t j = 25 oc if= 10 a di/dt=100a/ m sec t rr q rr ?? ?? ?? ?? 5 00 ?? nsec nc input capacitance input capacitance reverse transfer capacitance vgs=0 volts vds=25 volts f =1 mhz c iss c oss c rss ?? ?? ?? 4200 450 135 ?? ?? ?? pf for thermal derating curves and other characteristics please contact ssdi marketing departme nt. note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: f00175e doc
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